biometric sensor with force detection and ultrasonic imaging capability

专利摘要:
The implementations of the present matter described here relate to sensors including sensor elements of the piezoelectric micromechanical ultrasonic transducer (PMUT) type and arrangements thereof. The PMUT sensor elements can be switched between a non-ultrasonic force detection mode and an ultrasonic imaging mode. A PMUT sensor element can include a diaphragm that is capable of static displacement when a force is applied, and is capable of dynamic displacement when the PMUT sensor element transmits or receives ultrasonic signals. In some implementations, a PMUT sensor element includes a two-dimensional electron gas structure in the diaphragm. The sensors can additionally include a sensor controller configured to switch between a non-ultrasonic force detection mode and an ultrasonic image generation mode for one or more of the PMUT sensor elements, where the applied force is measured in the non-ultrasonic force detection and in which an object is represented by ultrasonic imaging during ultrasonic imaging mode.
公开号:BR112019026786A2
申请号:R112019026786-7
申请日:2018-05-23
公开日:2020-06-30
发明作者:Firas Sammoura；David William Burns；Ravindra Vaman Shenoy
申请人:Qualcomm Incorporated；
IPC主号:

专利说明:

[0001] [0001] This application claims priority to US Patent Application No. 15 / 633,386, entitled "BIOMETRIC SENSOR WITH FORCE DETECTION AND ULTRASONIC IMAGING CAPABILITY", filed on June 26, 2017, which is hereby incorporated by reference . TECHNICAL FIELD
[0002] [0002] The present disclosure refers to piezoelectric ultrasonic transducers and an electronic sensor array of piezoelectric ultrasonic transducers for biometric sensing, image generation, force detection and touch recognition. RELATED TECHNOLOGY DESCRIPTION
[0003] [0003] Ultrasonic sensor systems can use an ultrasonic transmitter to generate and send ultrasonic waves through an ultrasonic transmissive medium or means and towards an object to be detected. The ultrasonic transmitter can be operatively coupled to an array of ultrasonic sensors configured to detect parts of the ultrasonic wave that are reflected from the object. For example, in ultrasonic fingerprint sensors, an ultrasonic wave can be produced by starting and stopping the transmitter for a short time. At each material interface encountered by the ultrasonic wave, a portion of the ultrasonic wave can be reflected.
[0004] [0004] For example, in the context of an ultrasonic fingerprint sensor, the ultrasonic wave can travel across a plate on which an object, such as a person's finger, can be placed to obtain print image information digital.
[0005] [0005] Thin film piezoelectric acoustic transducers are potential candidates for a variety of applications, including biometric sensors, ultrasonic imaging devices and fingerprint sensors. Such transducers can include piezoelectric micromechanical ultrasonic transducers (PMUTs) configured as a multilayer cell that includes a piezoelectric layer cell and a mechanical layer arranged over a cavity. The piezoelectric layer stack includes a layer of piezoelectric material. In some applications, a one-dimensional or two-dimensional array of any number of PMUT sensor elements can be envisaged.
[0006] [0006] Low-cost, low-power authentication activation mechanisms are of interest in electronic devices, such as smartphones, tablets and autonomous cars, but there are huge challenges involved. Capacitive touch detection mechanisms may be unable to differentiate between a determined and an inadvertent touch, leading to unwanted activation events. A light touch of a finger on a fingerprint sensor can result in poor image quality, making user authentication more difficult. SUMMARY
[0007] [0007] Each of the systems, methods and devices of the present disclosure has several innovative aspects, none of which alone is solely responsible for its desirable attributes revealed here.
[0008] [0008] An innovative aspect of the matter described in the present disclosure relates to an apparatus including a substrate; a sensor including an array of piezoelectric micromechanical ultrasonic transducer (PMUT) sensor elements on the substrate, where each PMUT sensor element includes a diaphragm having a piezoelectric layer and a mechanical layer, in which the diaphragm is capable of displacement static when an applied force is applied and is capable of dynamic displacement when the PMUT sensor element receives or transmits ultrasonic signals; and a sensor controller configured to switch the sensor between a non-ultrasonic force detection mode and an ultrasonic image generation mode for one or more of the PMUT sensor elements, where the applied force is measured in the sensor detection mode. non-ultrasonic force and in which an object is represented by ultrasonic image during the ultrasonic imaging mode.
[0009] [0009] In some implementations, the sensor controller is configured to initialize the ultrasonic imaging mode based on a minimum imaging force being measured by the device in non-ultrasonic force detection mode. In some implementations, one or more of the PMUT sensor elements include a 2D electron gas structure disposed in the diaphragm. In some implementations, the sensor controller is configured to switch between non-ultrasonic force detection mode and an ultrasonic image generation mode for each of the PMUT sensor elements in the PMUT sensor element array. In some implementations, the sensor controller is configured to switch between non-ultrasonic force detection mode and an ultrasonic imaging mode for a subset of the PMUT sensor elements in the PMUT sensor element array.
[0010] [0010] In some implementations, the PMUT sensor elements of the subset of the PMUT sensor elements are located on the periphery of the PMUT sensor element array. In some of such implementations, the PMUT sensor elements of the subset of the PMUT sensor elements differ from the rest of the PMUT sensor elements of the PMUT sensor element array in terms of their shape, size, or both.
[0011] [0011] Another innovative aspect of the matter described in the present disclosure concerns a method of operating a fingerprint sensor, including measuring a finger strength of a finger positioned on the fingerprint sensor, generating the finger image when the force exceeds a threshold level of the pressed finger, and authenticate the finger based on the image generation of the finger. In some implementations, generating the finger image includes obtaining ultrasonic image information of the finger, and the finger authentication is based on the ultrasonic image information. In some implementations, imaging the finger includes obtaining ultrasound image information of the finger when the finger strength exceeds a minimum threshold level of finger representable in imaging. In some implementations, imaging the finger includes obtaining ultrasound image information of the finger when the finger strength is less than a maximum representable finger threshold level in imaging. In some implementations, the method additionally includes activating at least part of a mobile device when the strength of the finger exceeds the threshold level of pressed finger. In some implementations, the method additionally includes reducing the sample rate to measure finger strength when the finger strength is less than a raised finger threshold level.
[0012] [0012] Another innovative aspect of the matter described in the present disclosure concerns an apparatus including a substrate; a diaphragm including a mechanical layer arranged over a cavity, the cavity being positioned between the diaphragm and the substrate; and a 2D electron gas structure disposed over the diaphragm. In some implementations, the 2D electron gas structure is a gallium-aluminum nitride / gallium nitride (AlGaN / GaN) transistor. In some implementations, the diaphragm and the 2D electron gas structure are part of a sensor element, the diaphragm is capable of static displacement when an applied force is applied, and the 2D electron gas structure is a sensitive structure to the deformation configured to provide a static displacement signal that corresponds to the applied force. In some implementations, the diaphragm is additionally capable of dynamic displacement when the sensor element receives or transmits ultrasonic signals. In some such implementations, the device additionally includes a sensor controller configured to switch the sensor element between a non-ultrasonic force detection mode and an ultrasonic image generation mode, in which the applied force is measured in the detection mode of non-ultrasonic force and in which an object is represented through an ultrasonic image during the ultrasonic imaging mode.
[0013] [0013] In some implementations where the sensor element is one of an array of sensor elements on the substrate, each sensor element includes a diaphragm and a mechanical layer arranged over a cavity, the cavity being positioned between the diaphragm and the substrate , and each sensor element includes a 2D electron gas structure disposed in the diaphragm. In some implementations, the apparatus additionally includes an array of piezoelectric micromechanical ultrasonic transducer (PMUT) sensor elements in the substrate.
[0014] [0014] In some implementations, the device additionally comprises a piezoelectric layer cell arranged in the diaphragm, in which the piezoelectric layer cell is configured to excite the diaphragm and generate ultrasonic waves. In some implementations, the 2D electron gas structure is configured to detect static displacements or dynamic displacements of the diaphragm.
[0015] [0015] Another innovative aspect of the matter described in this one relates to a non-temporary computer-readable medium storing instructions executable by one or more processors coupled to a fingerprint sensor, the fingerprint sensor including an arrangement of elements of piezoelectric ultrasonic transducer (PMUT) sensor, instructions including: instructions for operating the PMUT sensor elements in a force detection mode; instructions for measuring a force applied to the fingerprint sensor operating in force detection mode; instructions to determine that a user's finger touched the fingerprint sensor based on the measured applied force; instructions for operating the PMUT sensor elements in an ultrasonic imaging mode to obtain fingerprint image information from the finger; and instructions for authenticating the user based on the fingerprint image information.
[0016] [0016] In some implementations, instructions for determining that a finger touched the fingerprint sensor based on the applied force include instructions for comparing the applied force with an activation threshold force. In some implementations, the instructions additionally include instructions for determining, after detecting that the finger has touched the fingerprint sensor, that the finger has been lifted from the fingerprint sensor based on a threshold deactivation force being measured by the device in detection mode of non-ultrasonic force. In some of these implementations, the threshold force of deactivation is less than the threshold force of activation. In some implementations, the device additionally includes instructions for determining that the applied force is greater than or equal to a minimum imaging threshold force. In some implementations, the device additionally includes instructions to initialize the ultrasonic imaging mode after determining that the applied force is greater than or equal to a minimum imaging threshold force.
[0017] [0017] Another innovative aspect of the matter described in the present disclosure concerns an apparatus including a substrate; a sensor including an array of piezoelectric micromechanical ultrasonic transducer (PMUT) sensor elements on the substrate, where each PMUT sensor element includes a diaphragm having a piezoelectric layer and a mechanical layer, in which the diaphragm is capable of displacement static when an applied force is applied and is capable of dynamic displacement when the PMUT sensor element receives or transmits ultrasonic signals; and means electrically coupled to the sensor to switch the sensor between a non-ultrasonic force detection mode and an ultrasonic image generation mode for one or more of the PMUT sensor elements, where the applied force is measured in a detection mode of non-ultrasonic force and in which an object is represented by ultrasonic imaging during an ultrasonic imaging mode. In some implementations, the device additionally includes means for determining that a finger has touched the sensor. In some implementations, the device additionally includes means for determining that the finger has been lifted from the sensor. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] [0018] The details of one or more implementations of the relevant matter described in this specification are set out in the present disclosure and accompanying drawings. Other characteristics, aspects and advantages will become apparent from the reading of the revelation. Note that the relative dimensions of the drawings and other diagrams in this disclosure may not be drawn in full scale. The dimensions, thicknesses, dispositions, materials, etc., illustrated and described in this disclosure are presented as an example only and should not be interpreted as limiting. Reference numbers and similar designations in the various drawings indicate similar elements.
[0019] [0019] Figures 1A and 1B illustrate side and top views, respectively, of an example of a sensor element of the piezoelectric micromechanical ultrasonic transducer (PMUT) type having non-ultrasonic force / touch detection and image generation capabilities. switchable ultrasonic.
[0020] [0020] Figure 1C illustrates a side view of an example of the PMUT sensor element illustrated in Figures 1A and 1B operating in a non-ultrasonic force / touch detection mode.
[0021] [0021] Figure 1D illustrates a side view of an example of the PMUT sensor element illustrated in Figures 1A and 1B operating in an ultrasonic imaging mode.
[0022] [0022] Figure 1E is an example of a schematic diagram of an equivalent circuit of the sensor element PMUT 100 illustrated in Figures 1C and 1D.
[0023] [0023] Figure 2 illustrates a side view of an illustrative configuration of an array of PMUT ultrasonic sensors capable of generating ultrasonic images.
[0024] [0024] Figure 3A illustrates a block diagram representation of the components of an illustrative sensing system 300 according to some implementations.
[0025] [0025] Figure 3B shows a block diagram representation of the components of an illustrative mobile device that includes the sensing system of Figure 3A.
[0026] [0026] Figure 4A shows an example of a flowchart illustrating a process for detection of force / touch, fingerprint image generation, and authentication using a sensor system including an array of ultrasonic sensors according to certain implementations.
[0027] [0027] Figure 4B shows an example of a flowchart illustrating a process for detecting force / touch, detecting finger lift, generating fingerprint images, and authenticating using a sensor system including an array of ultrasonic sensors.
[0028] [0028] Figure 5A is an example of a diagram illustrating the applied finger force versus time for finger touch detection and finger lift detection events of a fingerprint sensor operating in a non- ultrasonic.
[0029] [0029] Figure 5B is an example of a diagram illustrating the applied finger force versus time for image generation performed by a fingerprint sensor operating in an ultrasonic imaging mode.
[0030] [0030] Figure 6 is an example of a diagram illustrating a non-ultrasonic force / touch detection mode and an ultrasonic image generation mode of a fingerprint sensor versus applied finger force.
[0031] [0031] Figures 7A-7C illustrate an example of a PMUT sensor element that includes a 2D electron gas structure.
[0032] [0032] Figure 7D illustrates a side view of an example of a 2D electron gas structure that can be implemented with or without the PMUT sensor elements described here.
[0033] [0033] Figures 8-13 illustrate examples of various configurations of ultrasonic sensor arrays that are configured to switch between a non-ultrasonic force detection mode and an ultrasonic image generation mode.
[0034] [0034] Figures 14A to 17D illustrate examples of PMUT sensor elements that can be implemented in ultrasonic sensor arrays according to various implementations.
[0035] [0035] Figures 18A to 18D illustrate an example of a process flow for manufacturing a sensor element including a substrate, a diaphragm, and a 2D electron gas structure disposed in the diaphragm. DETAILED DESCRIPTION
[0036] [0036] The following description is intended for certain implementations in order to describe the innovative aspects of this disclosure. However, a person with rudimentary knowledge in the field will readily recognize that the teachings presented here can be applied in several different ways. The implementations described can be implemented on any device, device, or system for ultrasonic sensing. In addition, it is contemplated that the implementations described can be included or associated with a variety of electronic devices, such as, but not limited to: Mobile phones, cell phones with multimedia Internet capability, mobile TV receivers, wireless devices , smartphones, smart cards, smart watches,
[0037] [0037] The implementations of the present matter described here relate to sensor elements of the piezoelectric micromechanical ultrasonic transducer (PMUT) type and arrangements thereof. The PMUT sensor elements can be switched between a non-ultrasonic force detection mode and an ultrasonic imaging mode. A PMUT sensor element may include a diaphragm that is capable of static displacement when applying force from an object, such as a finger, and is capable of dynamic displacement when the PMUT sensor element transmits or receives signals ultrasonic. In some implementations, a PMUT sensor element may include a two-dimensional electron gas structure in the diaphragm.
[0038] [0038] The implementations of the present matter described here also relate to sensors including an array of PMUT sensor elements. The sensors can additionally include a sensor controller configured to switch between a non-ultrasonic force detection mode and an ultrasonic image generation mode for one or more of the PMUT sensor elements, where the applied force is measured in the detection of non-ultrasonic force and in which an object is represented by ultrasonic image during the ultrasonic imaging mode. Forces that exceed the threshold force levels for activation and imaging can be detected and a response is generated as a result.
[0039] [0039] The specific implementations of the subject described in the present disclosure can be implemented to realize one or more of the following potential advantages. In an ultrasonic force detection mode, the sensors allow the activation of a device with low energy consumption. By detecting forces that exceed a threshold force level, the sensor can become insensitive to light, reducing accidental touches with unintended activation. Image quality control for fingerprint imaging can be enhanced using a threshold strength level for imaging.
[0040] [0040] The PMUTS aspects were described in US Patent Application No. 14 / 569,280, filed on December 12, 2014 and entitled "MICROMECHANICAL ULTRASONIC TRANSDUCERS AND DISPLAY", and in US Patent Application No
[0041] [0041] Figures 1A and 1B illustrate side and top views, respectively, of an example of a sensor element of the piezoelectric micromechanical ultrasonic transducer (PMUT) type having non-ultrasonic force / touch detection capability and ultrasonic imaging capability. switchable. Referring to Figure 1A, the sensor element PMUT 100 includes a stack of piezoelectric layer 110 and a mechanical layer 130 arranged to form a diaphragm (which can be later called "PMUT diaphragm" or "deformable diaphragm") supported by a fixing structure 170 over a cavity 120. The piezoelectric layer stack 110 includes a piezoelectric layer 115, a lower electrode 112 and an upper electrode 114. The upper electrode 114, in the illustrated implementation, can also be called an internal electrode, a since it is arranged in an internal part of the deformable diaphragm.
[0042] [0042] In the illustrated implementation, the lower electrode 112 is disposed below the piezoelectric layer 115 and close to the cavity 120, while the upper electrode 114 is disposed above the piezoelectric layer 115, close to a surface of the piezoelectric layer 115 that is opposite to cavity 120. Cavity 120 can be formed on or on a substrate 160. Cavity 120 is positioned between the diaphragm and substrate 160. In implementations where the cavity is formed on substrate 160, such as a cavity-silicon implementation on insulator, the fixing structure 170 can be part of the substrate 160.
[0043] [0043] Substrate 160 may be or include, for example, a silicon wafer, a silicon wafer over insulator (SOI), a silicon wafer or SOI with integrated circuitry, a semiconductor substrate, or a substrate of glass or polymer with thin film transistor (TFT) circuitry. In some implementations, substrate 160 may be a flexible substrate, such as a thin layer of polyimide (PI), polyethylene naphthalate (PEN) or poly (ethylene terephthalate) (PET), or a flexible substrate with a circuit set of InGaZnO (IGZO).
[0044] [0044] The piezoelectric layer stack may include a piezoelectric layer, such as aluminum nitride (A1N), zinc oxide (ZnO), lead zirconate titanate (PZT) or other suitable piezoelectric material with one or more electrode layers electrically coupled to the piezoelectric layer. The piezoelectric layer stack can be standardized and grooved to form pathways, release holes and other aspects. The mechanical layer can include silicon dioxide (SiO2), silicon oxinitride (SiON), silicon nitride (SiN), another dielectric material, or a combination of materials or dielectric layers. In some examples, the diaphragm can be configured as an elongated rectangle having a longitudinal dimension of length L and width W, with L being at least twice W. In some examples, the diaphragm may have a ratio of width W to thickness T between 5: 1 to 50: 1.
[0045] [0045] As can be seen in Figure 1B, the sensor element PMUT 100 can have a circular geometry. The PMUT 100 sensor element is an example of a two-port PMUT, which is a PMUT having two input / output ports, one associated with the lower electrode 112 and the other associated with the upper electrode 114. The lower electrode 112 is a reference at a Vref voltage and the upper electrode 114 is an output / drive / detection electrode at a Vinner voltage. The transceiver circuitry 180 is illustrated schematically as connected to the lower electrode 112 and the upper electrode 114. The transceiver circuitry 180 can be electrically coupled to the sensor element PMUT 100 via the two input / output ports associated with the transceiver circuitry 180.
[0046] [0046] In the example of Figures 1A and 1B, the upper electrode 114 can be called the internal electrode. In some implementations, described in more detail below, a three-port PMUT sensor element may have two upper electrodes, for example, an upper inner electrode and an upper outer electrode with the outer electrode close to the peripheral region of the deformable diaphragm. The PMUT sensor elements described here are not limited to any particular geometry. Additional examples of two-door and three-door PMUT sensor elements having various geometries are described below with reference to Figures 7A to 7C and 14A to 17D.
[0047] [0047] Figure 1C illustrates a side view of an example of the PMUT 100 sensor element illustrated in Figures 1A and 1B operating in a non-ultrasonic force / torque detection mode. Figure 1D illustrates a side view of an example of the PMUT 100 sensor element illustrated in Figures 1A and 1B operating in an ultrasonic imaging mode. Turning to Figure 1C, the PMUT 100 sensor element is illustrated with the deformable PMUT diaphragm having a static displacement due to an applied force, as indicated by the arrows pointing downwards and the dashed lines of the deformed diaphragm. In operation, the piezoelectric layer stack 110 and mechanical layer 130 are forced to bend in response to the applied force, which the PMUT sensor element converts into an electrical signal that can be read by the transceiver circuitry 180 in Figure 1B .
[0048] [0048] In some implementations, deflection of the PMUT diaphragm with the force applied from a finger generates a load that can be used to power a small front interface portion of an associated controller. For example, the charge generated by the piezoelectric layer after static deflection can be stored in a power supply capacitor which can, in turn, supply the front interface circuitry of the associated controller. The front interface part can be used to activate other parts of the controller or to perform a threshold detection function to avoid activating the controller and / or an associated application processor, unless a minimum threshold force has been applied.
[0049] [0049] In some implementations, described in more detail below with respect to Figures 7A to 7D, the sensor element PMUT 100 may incorporate a 2D electron gas structure, such as a 2D gas transistor. Such 2D electron gas structures are sensitive to deformation due to the applied force and can be used in static displacement, in non-ultrasonic force detection mode or in a dynamic displacement mode. Sensor elements with a diaphragm and a 2D electron gas structure disposed in the diaphragm can be used to image an object ultrasonically during an ultrasonic imaging mode.
[0050] [0050] Figure 1D illustrates a side view of the PMUT 100 sensor element with dynamic displacements due to the generation and detection of ultrasonic waves. During operation, the piezoelectric layer stack 110 and mechanical layer 130 can be forced to bend and vibrate in response to a time-varying excitation voltage applied through the upper electrode 114 and the lower electrode 112 by the circuitry of transceiver 180. As a result, one or more ultrasonic pressure waves having frequencies in an ultrasonic frequency band can be propagated into the air, a plate,
[0051] [0051] In some implementations, an array of PMUT sensor elements can be configured as an array of ultrasonic sensors that is configured for ultrasonic fingerprint imaging. Figure 2 illustrates a side view of an illustrative configuration of an array of PMUT ultrasonic sensors capable of generating ultrasonic images. Figure 2 represents an array of ultrasonic sensors 200 with an array of PMUTs configured as transmitting and receiving elements that can be used for ultrasonic imaging. The PMUT 262 sense elements in a PMUT 260 sensor array substrate can emit and detect ultrasonic waves. As illustrated, an ultrasonic wave 264 can be transmitted from one or more PMUT 262 sensor element. Ultrasonic wave 264 can propagate through a propagation medium, such as an acoustic coupling medium 265 and a plate 290, in towards an object 202, such as a finger or stylus positioned on an outer surface of the plate
[0052] [0052] An array of ultrasonic sensors can be part of a device's sensing system, for example, a mobile device. Figure 3A illustrates a block diagram representation of the components of an illustrative sensing system 300 according to some implementations. As illustrated, the sensing system 300 can include a sensor system 302 and a control system 304 electrically coupled to the sensor system 302. The sensor system 302 may be able to detect the presence of an object, for example, a finger human. The sensor system 302 may be able to scan an object and provide raw, usable image information to obtain an object signature, for example, a fingerprint of a human finger. The control system 304 may be able to control the sensor system 302 and process the raw measured image information received from the sensor system. In some implementations, the sensing system 300 may include an interface system 306 capable of transmitting or receiving data, such as raw or processed image information, from and to various components within or integrated with the sensing system 300, or, in some implementations, to and from various components, devices or other systems external to the sensing system.
[0053] [0053] Figure 3B shows a block diagram representation of the components of an illustrative mobile device 310 that includes the sensing system 300 of Figure 3A. The sensor system 302 of the sensor system 300 of the mobile device 310 can be implemented with an array of ultrasonic sensors 312, such as the array of ultrasonic sensors PMUT 200 illustrated in Figure 2. The control system 304 of the sensor system 300 can be implemented with a controller 314 that is electrically coupled to the array of ultrasonic sensors 312. Although controller 314 is illustrated and described as a single component, in some implementations, controller 314 may collectively refer to two or more control units or units processes in electrical communication with each other. In some implementations, the controller 314 may include one or more of a single-chip or multiple-chip general purpose processor, a central processing unit (CPU), a digital signal processor (DSP), an application processor, a circuit application-specific integrated system (ASIC), a field programmable gate array (FPGA) or other programmable logic device (PLD), discrete gate or transistor logic, discrete hardware components, or any combination of them designed to perform the functions and operations described here.
[0054] [0054] The sensing system 300 of Figure 3B can include an image processing module
[0055] [0055] In some implementations, in addition to the sensing system 300, the mobile device 310 may include a separate processor 320, such as an application processor, a memory 322, an interface 316 and a power supply 324. In some implementations, the controller 314 of the sensing system 300 can control the array of ultrasonic sensors 312 and the image processing module 318, and the processor 320 of the mobile device 310 can control other components of the mobile device 310. In some implementations, the processor 320 can communicate data to controller 314 including, for example, instructions or commands. In some of such implementations, controller 314 can communicate data to processor 320, including, for example, raw or processed image information. It should also be understood that, in some other implementations, the functionality of controller 314 may be implemented entirely, or at least partially, by processor 320. In some such implementations, a separate controller 314 for sensing system 300 may not be necessary , since the functions of the controller 314 can be performed by the processor 320 of the mobile device 310.
[0056] [0056] Depending on the implementation, one of controller 314 and processor 320, or both, can store data in memory 322. For example, data stored in memory 322 can include raw image information, filtered or processed image information otherwise, estimated PSF or estimated image information, and refined final PSF or final refined image information. Memory 322 can store executable code per processor or other executable computer-readable instructions capable of execution by one or both of controller 314 and controller 320 to perform various operations (or to cause other components, such as the array of ultrasonic sensors 312, the image processing module 318, or other modules, perform operations), including any of the calculations, computational calculations, estimates, or other determinations described here (including those presented in any of the following equations). It should also be understood that memory 322 can collectively refer to one or more memory devices (or "components"). For example, depending on the implementation, the controller 314 may need to access and store data on a different memory device in addition processor 320. In some implementations, one or more of the memory components can be implemented as a Flash memory array based on NOR or NAND. In some other implementations, one or more of the memory components can be implemented as a different type of non-volatile memory In addition, in some implementations, one or more of the memory components may include a volatile memory array, such as, for example, a type of RAM.
[0057] [0057] In some implementations, the controller 314 or processor 320 can communicate data stored in memory 322 or data received directly from the image processing module 318 through an interface 316. For example, such communicated data may include information of derived image or data or otherwise determined from the image information. Interface 316 may collectively refer to one or more interfaces of one or more various types. In some implementations, interface 316 may include a memory interface for receiving data from or storing data in external memory, such as a removable memory device. Additionally or as an alternative, interface 316 may include one or more wireless network interfaces or one or more wired network interfaces that enable the transfer of raw or processed data, as well as the reception of data from a computing device. , external system or server.
[0058] [0058] A power supply 324 can supply power to some or all of the components in the mobile device 310. The power supply 324 can include one or more of a variety of energy storage devices. For example, power supply 324 may include a rechargeable battery, such as a nickel-cadmium battery or a lithium-ion battery. In addition or as an alternative, power supply 324 may include one or more supercapacitors. In some implementations, the power supply 324 may be chargeable (or “rechargeable”) using energy accessed from, for example, a wall outlet (or “Outlet”) or a photovoltaic device (or “solar cell” or “Array of solar cells”) integrated with the mobile device 310. Additionally, or as an alternative, the power supply 324 can be chargeable without the use of wire.
[0059] [0059] As used here later, the term “processing unit” refers to any combination of one or more of an ultrasonic system controller (for example, the 314 controller), an image processing module (for example , the image processing module 318), or to a processor separate from a device that includes the ultrasonic system (for example, processor 320). In other words, the operations that are described below as being performed by or using a processing unit can be performed by one or more of an ultrasonic system controller, an image processing module or a processor separate from a device that includes the sensing system.
[0060] [0060] As described above, the array of ultrasonic sensors can be configured to operate in a static, non-ultrasonic mode, to detect the force of a finger or other object by exerting pressure on the sensor. Once the presence of a finger is detected, the fingerprint can be ultrasonically represented by the sensor and a user is authenticated. Figure 4A shows an example of a flowchart illustrating a 400 process for force / touch detection, fingerprint imaging, and authentication using a sensor system including an array of ultrasonic sensors according to certain implementations. It should be noted, in relation to Figure 4A, as well as in relation to Figure 4B below, that the functions that are performed independently of the detection of force / touch (for example, routines or applications) are not illustrated for clarity.
[0061] [0061] Process 400 starts at block 402 with the measurement of the static force Fstatic in the next sampling event. Examples of sample rates can range from less than about 5 events per second to 20 events per second or more. Static force can be measured for one or more sensor elements in the array of ultrasonic sensors, as described above with respect to Figure 1C, for a single PMUT sensor element. Process 400 continues in a decision block 404, where the measured static force Fstatic is compared with a threshold activation force level, Fon, min. In one example, the threshold level of activation may be 20 grams-force (gf). However, it is understood that the threshold level of activation may depend on a specific sensor, device and / or user. In some implementations, a user-specific activation threshold level can be determined during a registration process. If the measured static force is less than the activation threshold level, process 400 returns to the block
[0062] [0062] In some implementations, the sensor can detect when a finger is lifted from the sensor and modify the operations of a mobile device accordingly. Figure 4B shows an example of a flow chart illustrating a 401 process for force / touch detection, finger lift detection, fingerprint imaging, and authentication using a sensor system including an array of ultrasonic sensors as described here.
[0063] [0063] Process 401 begins with blocks 402, 404 and 406 executed as described above in relation to Figure 4A. After a finger touch of minimal force is detected and one or more activation operations are activated or otherwise executed in block 406, process 401 continues in block 408 with the measurement of static force. The sample rate for block 408 can be the same or different for block 402. Process 401 continues in decision block 410, where the measured static force Fstatic is compared with a threshold force level of deactivation, Foff, max .
[0064] [0064] If the static force measured in block 416 is greater than or equal to the minimum threshold level for imaging, process 401 continues in decision block 418, where the measured static force Fstatic is compared with a maximum threshold level image generation, Fimage, max. The maximum threshold level of imaging can be the maximum force at which the ultrasonic imaging of a fingerprint can be performed to obtain a sufficiently accurate and detailed image for authentication. If the static force is greater than the maximum imaging threshold, the process can return to block 414 and a maximum image representable finger condition can be entered. You can enter the maximum representable finger condition in image when the measured finger strength is greater than the maximum imaging threshold level, also called the maximum finger imaging threshold level. If the static force is less than or equal to the maximum imaging threshold level and the static force is greater than the minimum imaging threshold level, the 401 process may enter a fingerable image condition and continue with the generation of an ultrasonic fingerprint image in block 420 and executing an authentication process in block 422, as described above with respect to Figure 4A. You can enter the condition of a representable finger in image when the measured strength of the finger is greater than the minimum threshold level of image generation, also called the minimum threshold level of a representable finger in image. In some implementations, it is possible to enter the condition of an image representable finger when the measured strength of the finger is greater than the minimum threshold level of representable finger in image and less than the maximum threshold level of representable finger in image. In some implementations, the minimum finger representable threshold level can be equal to or greater than the pressed finger threshold.
[0065] [0065] In one example, a minimum threshold level for imaging can be 40 gf and a maximum threshold level for imaging can be 80 gf. However, it is understood that these threshold levels may depend on the specific sensor, device and / or user. In some implementations, user-specific imaging threshold levels can be determined during a registration process. In some implementations, there may not be a maximum threshold level for image generation with the 401 process proceeding directly from block 416 to block 420.
[0066] [0066] In some implementations, a registration process is performed in which an applied finger force is measured. A range of images of different strengths can be stored as part of the registration process, for example, image 1 to 40 gf, image 2 to 50 gf, etc., and the measured strength of the finger can be stored as part of one or more registration templates that include the associated fingerprint image information. During a subsequent authentication process, the strength of the finger represented in the image can be compared with the stored finger strength of the registration templates using a comparison method with force classification. For example, if a fingerprint is imaged at a finger strength of 50 gf, a registration template having a finger strength at or close to 50 gf can be used first during the authentication process in an attempt to vitrify if the user is a registered user.
[0067] [0067] Figure 5A is an example of a diagram 500 illustrating the applied finger force versus time for finger touch detection and finger lift detection events of a fingerprint sensor operating in a non-force detection mode. -ultrasonic. Ten sampling events, t1 to t10, are illustrated, each having a tsample duration. The activation threshold level, Fon, min, and the activation threshold level, Foff, max, are indicated on the y axis. At 502, between sampling events t2 and t3, a finger begins to touch the fingerprint sensor. In 504, as the finger continues to press, the applied finger force is greater than the activation threshold level, Fon, min. Then, at 506, the applied force of the finger is measured to be greater than the activation threshold level, Fon, min, indicating a minimum force touch detection, which initiates activation operations, and can send an activation signal. to an application processor to activate one or more activation operations. Device activation and continued operations 520, which may include performing imaging and authentication operations, are performed. Between t6 and t7, the finger starts to lift. In 508, the applied finger force is less than the deactivation threshold level Foff, max. The finger is lifted from the device at 510, which is detected at 512, the next sampling event. Continued operations 522 can be performed, such as sampling in a non-ultrasonic force detection mode and running applications in the background. In some implementations, it is possible to enter the condition of pressed finger at 506, when the measured force of the finger exceeds the threshold level of pressed finger (Fon, min). The raised finger condition can be entered when the applied finger force is measured and determined at 512 as being less than the threshold level of the raised finger (Foff, max).
[0068] [0068] Figure 5B is an example of a 501 diagram illustrating the applied finger force versus time for image generation performed by a fingerprint sensor operating in an ultrasonic imaging mode. Events 502-512 related to finger touch detection and finger lift detection, as described above with respect to Figure 5A, are illustrated in diagram 501, although it should be noted that some occur in different sampling events in relation to the number example in Figure 5A.
[0069] [0069] The minimum image generation threshold, Fimage, min, and the maximum image generation threshold, Fimage, max, are indicated on the y axis. In the example in Figure 5B, in 514, the applied finger strength is measured to be greater than the minimum imaging threshold, Fimage.min. This initiates a 526 image acquisition operation with the fingerprint sensor operating in the ultrasonic imaging mode to acquire or obtain ultrasonic images and / or fingerprint image information from the finger. A 528 authentication process is then performed. Continued operations 525 can then be performed. If the fingerprint is authenticated, continued 524 operations may include running multiple applications on a mobile device. In the example in Figure 5B, continued operations 522, such as sampling in a non-ultrasonic force detection mode, may continue during continued operations 524, however, in some implementations, sampling in non-ultrasonic force detection mode may not continue if the device is being actively used after authentication. In some implementations, it is possible to enter an image representable finger condition in 514, with the finger represented in image when the measured finger strength exceeds the minimum threshold level of image representable finger (Fimage, min) and, in some implementations, it is also less than the maximum threshold level of finger representable in image (Fimage, max).
[0070] [0070] Figure 6 is an example of a diagram 600 illustrating a non-ultrasonic force / touch detection mode and an ultrasonic image generation mode of a fingerprint sensor versus applied finger force. The activation threshold level Fon, min, the activation threshold level Foff, max, the minimum threshold level for imaging Fimage, min and the maximum threshold level for imaging Fimage, max are indicated. It should be noted that the threshold levels associated with the applied force are illustrative. In the illustrated scenario, a minimum of 20 gf (Fon, min) is required for detecting a minimum strength finger touch and less than 10 gf (Foff, max) for detecting a finger lift. A minimum of 40 gf (Fimage, min) is required for fingerprint imaging. Above 80 gf of applied force (Fimage, max), imaging can be interrupted. However, as described above with respect to Figures 4A and 4B, these threshold levels may vary based on one or more of the specific sensor, device or user system.
[0071] [0071] In the example in Figure 6, the fingerprint sensor can be in a 602 ultrasonic imaging mode only when the applied finger force is between 40 gf and 80 gf, the minimum and maximum imaging threshold levels, respectively . As indicated above with respect to Figure 4B, in some implementations, there may not be a maximum threshold level for image generation. In addition, in the example in Figure 6, the 604 non-ultrasonic force / touch detection mode can be implemented on all applied finger forces. It should be noted that, between 40 gf and 80 gf, the fingerprint sensor can be either in the 602 ultrasonic imaging mode or in the 604 non-ultrasonic force detection mode. For example, if a fingerprint does not have been imaged or authenticated, the ultrasonic imaging mode can be activated when the applied finger force is measured to be within 40 gf and 80 gf. However, if a fingerprint has already been authenticated and the device is in use, the fingerprint sensor may be in non-ultrasonic detection mode within this range of applied finger force to determine, for example, whether the finger has been or not lifted. As noted above, in some implementations, non-ultrasonic detection mode can be employed only when the device is in a hibernate mode or is turned off.
[0072] [0072] In some implementations, a PMUT sensor element may include a two-dimensional (2D) electron gas structure, such as a 2D gas transistor that is sensitive to deformation. A 2D electron gas structure can be arranged in or fabricated with a diaphragm from a PMUT sensor element. A non-ultrasonic force detection mode can employ a static displacement signal from the 2D electron gas structure indicating a degree of deformation due to a static displacement of the diaphragm and corresponding to the applied force. Examples of 2D electron gas structures (for example, "two-dimensional electron gas" or "1DEG") that can be employed include high electron mobility transistor (HEMT) structures. In a specific example, aluminum-gallium nitride / gallium nitride (AlGaN / GaN) heterostructures including AlGaN / GaN transistors and Schottky AlGaN / GaN diodes can be employed.
[0073] [0073] Figures 7A-7C illustrate an example of a PMUT 700 sensor element that includes a 2D electron gas structure. Figure 7A shows a side view of the PMUT sensor element; Figure 7B shows a top view of the PMUT sensor element; and Figure 7C is a schematic diagram of an equivalent circuit of the PMUT 700 sensor element shown in Figures 7A and 7B.
[0074] [0074] The sensor element PMUT 700 is similar to that shown in Figures 1A to 1D, with the addition of a 2D 740 electron gas structure, which is formed in an external region of the mechanical layer 730 of the PMUT diaphragm. An enlarged view of an example of a 2D 740 electron gas structure is illustrated in Figure 7D. The PMUT diaphragm includes a piezoelectric layer stack 710 and a mechanical layer 730 supported by a fastening structure 770 on a cavity 720. The cavity 720 can be formed on or on a substrate 760.
[0075] [0075] The piezoelectric layer cell 710 includes a piezoelectric layer 715, a lower electrode 712 and an upper electrode 714. The upper electrode 714, in the illustrated implementation, can also be called the internal electrode, since it is disposed on a part internal deformable diaphragm.
[0076] [0076] An equivalent circuit of the PMUT 700 sensor element is illustrated in Figure 7C. Each of the illustrated terminals can be connected to the transceiver circuitry, with the 2D electron gas structure used during non-force detection mode
[0077] [0077] Figure 7D illustrates a side view of an example of a 2D 740 electron gas structure that can be implemented with or without the PMUT sensor elements described here. In the example in Figure 7D, the 2D 740 electron gas structure is an AlGaN / GaN transistor that includes a GaN 782 buffer layer, a GaN 784 body layer, an AlGaN 786 gate dielectric layer, a cell of source (S) 788, and a port stack (G) 792. In one example, the source stack 788 and drain stack 790 can be titanium / aluminum / nickel / gold cells (Ti / Al / Ni / Au ) and port cell 792 can be a Ni / Au cell. A passivation layer (not shown), such as silicon nitride (SiN) or other suitable dielectric material, can be deposited by forming over the 2D 740 electron gas structure. The metallic interconnections (not shown) provide connections between the stack source 788, drain stack 790, port stack 792 and the appropriate controller circuitry.
[0078] [0078] The 2D 740 electron gas structure can be formed in the mechanical layer 730 of a PMUT 700 sensor element by conventional thin film processing techniques, such as chemical deposition of vapor-phase organometallic (MOCVD) or deposition by epitaxy by molecular beam (MBE), lithographic pattern and chemical corrosion (etching). In some implementations, a 2D electron gas structure can be manufactured during the manufacture of the mechanical layer of a PMUT sensor element, forming an integral part of the mechanical layer.
[0079] [0079] In some implementations, a 2D electron gas structure can be formed on or with a diaphragm that is not an ultrasonic transducer to form a non-ultrasonic sensor element. Structurally, such a sensor element may be similar to that illustrated in Figure 7A, including the 2D electron gas structure 740 in a mechanical layer 730, that is, suspended over a cavity 720. A piezoelectric layer cell 710 may or may not be present . As discussed in more detail below, a non-ultrasonic sensor element including a 2D electron gas structure in a diaphragm can be incorporated into an ultrasonic sensor array that includes PMUT sensor elements. In some implementations, a non-ultrasonic sensor element including a 2D electron gas structure in a diaphragm or other structure, such as a cantilever beam, can be incorporated into any appropriate sensor arrangement or otherwise used to provide highly sensitive force detection.
[0080] [0080] Figures 8 to 13 illustrate examples of various configurations of ultrasonic sensor arrangements that are configured to switch between a non-ultrasonic force detection mode and an ultrasonic image generation mode. In some implementations, only a subset of PMUT sensor elements in an array of PMUT sensor elements are used for force detection in the non-ultrasonic force detection mode. This is due to the fact that, in some implementations, accurate force measurements can be obtained using only a subset of the PMUT sensor elements.
[0081] [0081] Figure 8 illustrates an example of an array of ultrasonic sensors 800 including PMUT 802 sensor elements and PMUT 804 sensor elements formed on an 860 substrate. PMUT 802 sensor elements are illustrated as circular PMUT sensor elements. Examples of circular PMUT sensor elements are described with reference to Figures 1A to 1D, above, and with reference to Figures 14A to 14C, below. It will be understood that these PMUT sensor elements can have any suitable shape. In some implementations, the PMUT 802 sensor elements are not used for force detection in non-ultrasonic force detection mode.
[0082] [0082] Figure 9 illustrates an example of an array of ultrasonic sensors 900 including sensor elements PMUT 902 and sensor elements PMUT 904 formed on a substrate 960. Sensor elements PMUT 904, which are on the periphery of the arrangement forming the edge outermost of the array, can be used exclusively for non-ultrasonic force detection or both for non-ultrasonic force detection and for ultrasonic image generation. The PMUT 902 sensor elements, located inside the array, can be used for ultrasonic imaging and may or may not be used for non-ultrasonic force detection in some implementations.
[0083] [0083] In some implementations, the PMU 904 sensor elements include 2D electron gas structures for force detection. In some implementations, sensor elements 904 may include piezoelectric layer cells, 2D electron gas structures, or both piezoelectric layer cells and 2D electron gas structures. Examples of PMUT sensor elements that include 2D electron gas structures are described above with respect to Figures 7A to 7D and additionally below with respect to Figures 17A to 17C. In implementations where the PMUT 902 sensor elements are not used for force detection, the 902 sensor elements may or may not include 2D electron gas structures. In implementations where the PMUT 904 sensor elements are used for non-ultrasonic force detection, both the PMUT 902 sensor elements and the PMUT 904 sensor elements can be used for ultrasonic imaging. In some implementations, the PMUT 904 sensor elements, with or without 2D electron gas structures, can be used for cursor control, screen navigation, and for control purposes.
[0084] [0084] Figure 10 illustrates an example of an array of ultrasonic sensors 1000 including sensor elements PMUT 1002 and sensor elements PMUT 1004 formed on a substrate 1060. Sensor elements PMUT 1004, which are located on the periphery of the arrangement and the from the outermost edge of the array, they can be used for detecting non-ultrasonic force or generating an ultrasonic image, or both. The PMUT 1002 sensor elements, located inside the array, can be used for ultrasonic imaging and not for detecting non-ultrasonic force in some implementations. As in Figure 8, the PMUT 1004 sensor elements are rectangular and larger than the PMUT 1002 sensor elements. The PMUT 1004 sensor elements can be used, in some implementations, for cursor control, screen navigation, and for purposes of control.
[0085] [0085] Figure 11 illustrates an example of an array of 1100 ultrasonic sensors including PMUT 1102 sensor elements and PMUT 1104 sensor elements formed on a 1160 substrate. PMUT 1104 sensor elements, which are located on the periphery of the arrangement and form the outermost edge of the array, can be used for non-ultrasonic force detection and may or may not be used for ultrasonic imaging. The PMUT 1102 sensor elements, located inside the array, can be used for ultrasonic imaging and may or may not be used for non-ultrasonic force detection in some implementations. As in Figure 8, the PMUT 1004 sensor elements are rectangular and larger than the PMUT 1002 sensor elements. In the example in Figure 11, the sensor elements 110 can offer cursor or x and y pointer control with the 1110 sensor elements. providing x cursor or x pointer control and sensor elements 1108 providing y cursor or y pointer control.
[0086] [0086] Figure 12 illustrates an example of an array of ultrasonic sensors 1200 including PMUT 1204 sensor elements formed on a 1260 substrate. In the example of Figure 12, a subset or all PMUT 120 sensor elements in the array can be used either for detecting non-ultrasonic force and for generating ultrasonic images. In some implementations, the PMUT 1204 sensor elements may include 2D electron gas structures as described, for example, with Figures 7A to 7D and 17A and 17C together with the piezoelectric layer cells. In some implementations, the PMUT 1204 sensor elements may not include 2D electron gas structures as described, for example, with reference to Figures 1A to 1E, Figures 14A to C, Figures 15A to 15C and Figures 16A to 16C .
[0087] [0087] As indicated above, in some implementations, a 2D electron gas structure can be formed on or with a diaphragm that does not serve as an ultrasonic transducer to form a non-ultrasonic sensor element. Figure 13 illustrates an example of an array of ultrasonic sensors 1300 including PMUT sensor elements 1302 formed on a substrate 1360 and non-ultrasonic force sensor elements 1306 that include 2D electron gas structures in diaphragms. In some implementations, each PMUT 1302 sensor element in the ultrasonic sensor array 1300 may have a corresponding non-ultrasonic force sensor element 1306 in close proximity. In some implementations, as illustrated in Figure 13, each sensor element 1302 may include a piezoelectric layer stack and each sensor element 1306 may include a 2D electron gas structure.
[0088] [0088] The electronic sensor arrangements shown in Figures 8 to 13 can be configured as a "home" button on a mobile device or as an independent fingerprint sensor. In addition, they can be implemented in three-dimensional (3D) mice and haptic devices.
[0089] [0089] Figures 14A to 17D illustrate examples of PMUT sensor elements that can be implemented in an array of ultrasonic sensors according to various implementations. Figures 14A and 14B illustrate side views of an example of a three-port PMUT sensor element 1400 operating in a non-ultrasonic force detection mode and in an ultrasonic imaging mode, respectively. Figure 14C shows a top view of the PMUT sensor element 1400 illustrated in Figures 14A and 14B. Figure 14D shows an equivalent circuit for the PMUT sensor element shown in Figures 14A and 14B. The PMUT sensor element 1400 includes a stack of piezoelectric layer 1410 and a mechanical layer 1430 arranged to form a deformable diaphragm supported by a fastening structure 1470 over a cavity 1420. The cavity 1420 can be formed on or on a substrate 1460 The piezoelectric layer cell 1410 includes a piezoelectric layer 1415, a lower electrode 1412 and two upper electrodes: an internal electrode 1414 and an external electrode 1413.
[0090] [0090] In the illustrated implementation, internal electrode 1414, external electrode 1413 and lower electrode 1412 can be electrically coupled to the transceiver circuitry and can function as separate electrodes providing signal transmission, signal reception, and a reference in common or earth. This arrangement allows the timing of the transmission (Tx) and reception (Tx) signals to be independent of each other. More specifically, the illustrated arrangement enables substantially simultaneous transmission and reception of signals between the piezoelectric ultrasonic transducer (PMUT) sensor element 1400 and the transceiver circuitry.
[0091] [0091] Figure 14A is a side view of the PMUT 1400 sensor element with static displacement due to an applied force. As described above with respect to Figure 1C, in operation, the stack of piezoelectric layer 1410 and mechanical layer 1430 can be forced to bend in response to an applied force, which the PMUT sensor element converts into an electrical signal that can be read by the transceiver circuitry.
[0092] [0092] Figure 14B is a side view of the PMUT 1400 sensor element with dynamic displacement due to the generation and detection of ultrasonic waves. As described above with respect to Figure 1D, during operation in an ultrasonic imaging mode, the piezoelectric layer stack 1410 and mechanical layer 1430 can be forced to bend and vibrate in response to a variable excitation voltage with time applied through internal electrode 1414 and / or external electrode 1413 by the transceiver circuitry. As a result, one or more ultrasonic pressure waves having frequencies in an ultrasonic frequency band can be propagated into the air, a plate, a glass slide, a device wrap, or other propagation medium that overlaps the sensor element. PMUT 1400. The piezoelectric layer cell 140 can similarly receive ultrasonic pressure waves reflected from an object in the propagation medium, and convert the received ultrasonic pressure waves into electrical signals that can be read by the transceiver circuitry.
[0093] [0093] PMUT sensor elements can have several geometries, including, but not limited to, circular and rectangular geometries. In some embodiments, an ultrasonic array may include PMUT sensor elements having different geometries.
[0094] [0094] For example, as described above in relation to Figures 10 and 11, the PMUT sensor elements that are used for non-ultrasonic force detection, as well as for ultrasonic imaging, may have a different geometry than the sensor elements PMUT that are used only for ultrasonic imaging. Figures 15A and 15B illustrate side views of an example of a two-door PMUT sensor element 1500 having a rectangular geometry operating in a non-ultrasonic force detection mode and in an ultrasonic imaging mode, respectively. Figure 15C shows a top view of the PMUT 1500 sensor element shown in Figures 15A and 15B. Figure 15D shows an equivalent circuit for the PMUT sensor element shown in Figures 15A and 15B.
[0095] [0095] The PMUT 1500 sensor element includes a piezoelectric layer cell 1510 and a mechanical layer 1530 arranged to form a deformable diaphragm supported by a fixing structure 1570 over a cavity 1520. The cavity 1520 can be formed in or on a substrate 1560. The piezoelectric layer cell 1510 includes a piezoelectric layer 1515, a lower electrode 1512 and an upper electrode 1514. The upper electrode 1514 is also known as an internal electrode. Figure 15A is a side view of the PMUT 1500 sensor element with static displacement due to the applied force as described above in relation to Figure 1C. Figure 15B is a side view of the PMUT 1500 sensor element with dynamic displacement due to the generation and detection of ultrasonic waves as described above in relation to Figure 1D.
[0096] [0096] Figures 16A and 16B illustrate side views of an example of a three-port PMUT sensor element 1600 having a rectangular geometry operating in a non-ultrasonic force detection mode and in an ultrasonic image generation mode, respectively . Figure 16C shows a top view of the PMUT 1600 sensor element shown in Figures 16A and 16B. Figure 16D shows an equivalent circuit for the PMUT sensor element shown in Figures 16A and 16B.
[0097] [0097] The PMUT 1600 sensor element includes a piezoelectric layer stack 1610 and a mechanical layer 1630 arranged to form a deformable diaphragm supported by a fixing structure 1670 over a cavity 1620. The cavity 1620 can be formed in or on a substrate 1660. The piezoelectric layer stack 1610 includes a piezoelectric layer 1615, a lower electrode 1612 and two upper electrodes: an inner electrode 1614 and an outer electrode 1613.
[0098] [0098] As described above with respect to Figure 14, inner electrode 1614, outer electrode 1613 and lower electrode 1612 can be electrically coupled to the transceiver circuitry and can function as separate electrodes providing signal transmission, signal reception , and a reference in common or land. Figure 16A is a side view of the PMUT 1600 sensor element with static displacement due to the applied force. As described above with respect to Figure 1C, in operation, the piezoelectric layer stack 1610 and mechanical layer 1630 can be forced to bend in response to an applied force, which the PMUT sensor element converts into an electrical signal that can be read by the transceiver circuitry.
[0099] [0099] Figure 16B is a side view of the PMUT 1600 sensor element with dynamic displacement due to the generation and detection of ultrasonic waves. As described above with respect to Figure 1D, during operation in an ultrasonic imaging mode, the piezoelectric layer stack 1610 and mechanical layer 1630 can be forced to bend and vibrate in response to a variable excitation voltage with time applied through internal electrode 1614 and / or external electrode 1613 by the transceiver circuitry.
[00100] [00100] Figures 17A-17D illustrate an example of a PMUT 1700 sensor element that includes a 2D electron gas structure. The example in Figure 17A to 17D is similar to that described above in relation to Figures 7A to 7D with the upper electrode being an external electrode, instead of an internal electrode. Figures 17A and 17B illustrate side views of an example of the PMUT 1700 sensor element operating in a non-ultrasonic force detection mode and in an ultrasonic imaging mode. Figure 17C shows a top view of the PMUT 1700 sensor element shown in Figures 17A and 17B. Figure 17D shows an equivalent circuit for the PMUT sensor element illustrated in Figures 17A and 17B.
[00101] [00101] The PMUT 1700 sensor element includes a 2D 1740 electron gas structure formed in the mechanical layer 1730 of the PMUT diaphragm. In the example of Figures 17A to 17C, the 2D electron gas structure is arranged in the center of a circular diaphragm, rather than on the periphery as illustrated in Figures 7A and 7B. The deformable diaphragm includes a pile of piezoelectric layer 1710 and a mechanical layer 1730 supported by a fixing structure 1770 on a cavity 1720. Cavity 1720 can be formed on or on a substrate 1760. The pile of piezoelectric layer 1710 includes a piezoelectric layer 1715, a lower electrode 1712 and an upper electrode 1713. The upper electrode 1713, in the illustrated implementation, can also be called an external electrode, since it is arranged around an external peripheral part of the diaphragm.
[00102] [00102] Figure 17A is a side view of the PMUT 1700 sensor element with static displacement due to an applied force. As described above with respect to Figure 1C, in operation, the stack of piezoelectric layer 1710 and mechanical layer 1730 can be forced to bend in response to an applied force, which the sensor element PMUT 1700 converts into an electrical signal that can be read by the transceiver circuitry.
[00103] [00103] Figure 17B is a side view of the PMUT 1700 sensor element with dynamic displacement due to the generation and detection of ultrasonic waves. As described above with respect to Figure 1D, during operation in an ultrasonic imaging mode, the piezoelectric layer stack 1710 and mechanical layer 1730 can be forced to bend and vibrate in response to a variable excitation voltage with time applied through external electrode 1713 and / or lower electrode 1712 by the transceiver circuitry. Similarly, the 2D 1740 electron gas structure may exhibit mechanical deformation during static displacement of the diaphragm with applied force or dynamic displacement of the diaphragm in response to reflected ultrasonic waves, which can result in transistor characteristics that vary with time or static that can be detected by the transceiver circuitry.
[00104] [00104] Figures 18A to 18D illustrate an example of a process flow for making a sensor element 1800 including a substrate 1860, a diaphragm, and a 2D electron gas structure 1840 disposed in the diaphragm. The diaphragm may include parts of a mechanical layer 1830 covering a cavity 1820 with cavity 1820 positioned between the mechanical layer 1830 and the substrate
[00105] [00105] The substrate 1860 may include a glass substrate or a semiconductor substrate, such as a silicon substrate, an SOI substrate or a cavity-SOI substrate. In some implementations, substrate 1860 may include a cavity-SOI substrate with one or more cavities 1820 formed between a joined pair of silicon substrates. In some implementations, the 1860 substrate may include one or more sealed cavities formed from surface micromachining processes that make it possible to remove the sacrificial material in the cavity region and subsequently seal the chemical corrosion channel regions (not shown) with one or more thin films deposited to establish and retain a prescribed vacuum level within cavity 1820.
[00106] [00106] As illustrated in Figure 18A, a buffer layer 1882, such as a buffer layer of gallium nitride (GaN), can be deposited on the mechanical layer 1830 using, for example, a process such as chemical deposition of organometallic in phase vapor (MOCVD) or molecular beam epitaxy (MBE). In some implementations, an aluminum nitride seed layer (AIN) or an aluminum nitride, molybdenum and aluminum nitride seed layer stack (AIN / Mo / AIN) can serve as an 1882 buffer layer. A body layer 1884, like a GaN body layer, can be deposited epitaxially on the 1882 buffer layer using, for example, a MOVCD or MBE process. A door dielectric layer 1886, such as a dielectric layer of aluminum-gallium nitride (AlGaN), can be deposited on the body layer 1884 using, for example, a MOCVD or MBE process. The door dielectric layer 1886, the body layer 1884 and the buffer layer 1882 can be standardized and corroded using, for example, a photolithographic process with a photosensitive material (eg photoresist) that serves as a mask for dry corrosion (for example example, plasma corrosion or reactive ion corrosion) of the AlGaN and GaN layers to form the body of the 2D 1840 electron gas structure.
[00107] [00107] As illustrated in Figure 18B, a source stack 1888 and a drain stack 1890 can be formed in the dielectric layer of port 1886. The source stack 1888 and drain stack 1890 can be formed by depositing a layer of barrier 1850 of titanium on the dielectric layer of door 1886, followed by the deposition of a conductive layer 1852 of aluminum, a second layer of barrier 1854 of nickel, and a second conductive layer 1856 of gold. The conductive layer 1856, the barrier layer 1854, the conductive layer 1852 and the barrier layer 1850 can be standardized and engraved using a photolithographic process and stopping over the dielectric layer 1886 to form the source stack 1888 and the source stack. drain 1890. Alternatively, the barrier layer 1850, the conductive layer 1852, the barrier layer 1854 and the conductive layer 1856 can be standardized and engraved using a lift-off process, in which the layers are deposited on a patterned photoresist layer with openings in the source and drain regions, and in which the photoresist layer is subsequently removed using a wet or dry corrosion process together with parts of the conductive and barrier layers overlying, leaving the layers conductive and barrier in the intact source and drain regions to form the 1888 source stack and the 1890 drain stack. An annealing sequence, such as an annealing sequence Rapid thermal treatment (RTA), can be used to anneal the substrate 1860 and the layers formed on it, including the source stack 1888 and the drain stack 1890, and conduct the dopant from the source and drain cells through the door dielectric layer 1886 and body layer 1884.
[00108] [00108] A door stack 1892 can be formed in the door dielectric layer 1886, as shown in Figure 18C. A barrier layer 1864 of nickel and a conductive layer 1866 of gold can be deposited on the dielectric layer of door 1886 using, for example, sputtering or evaporative processes followed by patterning and chemical corrosion of the conductive layer 1866 and the barrier layer 1864. Alternatively, the door stack 1892 can be formed using a lift-off process with barrier layers and deposited conductors.
[00109] [00109] A passivation layer 1868, such as a layer of silicon nitride, can be deposited on the exposed parts of the substrate 1860, including the source stack 1888, the door stack 1892, and the drain stack 1890, as shows Figure 18D. The passivation layer 1868 can be patterned and engraved to form contact openings and to expose external parts of the 1888 source stack, the 1892 door stack and the 1890 drain stack. One or more layers of interconnecting metal (not shown) can be used to provide electrical connections to the source, port and drain of the 2D 1840 electron gas structure. In some implementations, a transfer process can be used to transfer materials deposited with MBE and MOCVD from a carrier substrate (not shown) ) for mechanical layer 1830 or substrate 1860.
[00110] [00110] As used here, an expression referring to “at least one of a list of items” refers to any combination of these items, including individual members. As an example, “at least one of: a, b or c” is intended to cover: a, b, c, a-b, a-c, b-c and a-b-c.
[00111] [00111] The various illustrative logics, logic blocks, modules, circuits and algorithm processes described in connection with the implementations disclosed herein can be implemented in the form of electronic hardware, computer software, or combinations of both. The interchangeability of hardware and software has been described in general, in terms of functionality, and illustrated in the various components, blocks, modules, circuits and illustrative processes described above. The decision as to whether such functionality is implemented in hardware or as software depends on the specific application and design restrictions imposed on the general system.
[00112] [00112] The hardware and data processing apparatus used to implement the various illustrative logic blocks, and circuits described in connection with the aspects disclosed herein can be implemented or carried out with a single chip or multiple general-purpose processor, a processor digital signals (DSP), an application specific integrated circuit (ASIC), a field programmable port arrangement (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination of designed to perform the functions described here. A general purpose processor can be a microprocessor or any conventional processor, controller, microcontroller or state machine. A processor can also be implemented as a combination of computing devices, for example, a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more together with a DSP core, or any other such configuration. In some implementations, specific processes and methods can be performed by a set of circuits that is specific to a particular function.
[00113] [00113] In one or more aspects, the functions described can be implemented in hardware, digital electronic circuitry, switch software, firmware, including the structures revealed in this specification and their structural equivalents, or in any combination thereof. The implementations of the relevant matter described in this specification can also be implemented as one or more computer programs, that is, one or more computer program instruction modules encoded in a computer-readable medium for execution by the data processing apparatus or to control its operation.
[00114] [00114] If implemented in software, functions can be stored in or transmitted as one or more instructions or code in a computer-readable medium, such as a non-temporary medium. The processes of a method or algorithm disclosed here can be implemented in an executable software module per processor that can reside in a computer-readable medium. Computer-readable media includes both computer storage media and communication media including any media that can be enabled to transfer a computer program from one location to another. The storage media can be any available medium that can be accessed by a computer. By way of example, and not limitation, non-temporary media may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that may be used. used to store desired program code in the form of instructions or data structures that can be accessed by a computer. In addition, any connection can be properly labeled as a computer-readable medium. The term disc, as used here, includes compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disc and Blu-ray disc, in which discs generally reproduce data magnetically, whereas discs reproduce data optically with laser. Combinations of the items listed above should also be included in the scope of computer-readable media. In addition, the operations of a method or algorithm can reside as one or a combination or set of codes and instructions in a machine-readable and computer-readable medium, which can be incorporated into a computer program product.
[00115] [00115] Various modifications to the implementations described in the present disclosure can be easily assimilated by those skilled in the art, and the general principles defined herein can be applied to other implementations without departing from the spirit or scope of the present disclosure. Therefore, the claims are not intended to be limited to the implementations presented here, but must be agreed to the broadest scope in line with the present disclosure, its principles and new aspects disclosed herein. Additionally, as will be appreciated by any individual minimally trained in the technique, the terms "upper" and "lower", "upper" and "lower", "frontal" and "rear", and "about", "overlying", "in ”,“ Under ”and“ underlying ”are sometimes used for the simplicity of description of the figures and indicate relative positions corresponding to the orientation of the figure on an appropriately oriented page, and may not reflect the appropriate orientation of the device as implemented.
[00116] [00116] Certain aspects that are described in this specification in the context of separate implementations can also be implemented in combination in a single implementation. Conversely, several aspects that are described in the context of a single implementation can also be implemented in multiple implementations separately or in any suitable subcombination. Furthermore, although the aspects can be described above as acting on certain combinations and even initially claimed as such, one or more aspects of a claimed combination can, in some cases, be removed from the combination, and the claimed combination can be directed to a subcombination or a variation of a subcombination.
[00117] [00117] Similarly, although the operations are represented in the drawings in a specific order, this should not be understood as a requirement that such operations be carried out in the specific illustrated order or in sequential order, or that all illustrated operations be carried out , to achieve desirable results. Furthermore, the drawings can schematically depict one or more illustrative processes in the form of a flow chart. However, other operations that are not depicted can be incorporated into the illustrative processes that are illustrated schematically. For example, one or more additional operations can be performed before, after, simultaneously, or between any of the operations illustrated. In certain circumstances, the parallel and multitasking process can be advantageous. In addition, the separation of the various system components in the implementations described above should not be understood as requiring such separation in all implementations, and it should be understood that the program components and systems described can generally be integrated together into a single software product. or packaged in multiple software products.
In addition, other implementations are within the scope of the following claims: In some cases, the actions stated in the claims may be carried out in a different order and still achieve desirable results.

权利要求:
Claims (30)
[1]
1. Apparatus, comprising: a substrate; a sensor including an array of piezoelectric micromechanical ultrasonic transducer (PMUT) sensor elements on the substrate, where each PMUT sensor element includes a diaphragm having a piezoelectric layer and a mechanical layer, in which the diaphragm is capable of displacement static when an applied force is applied and is capable of dynamic displacement when the PMUT sensor element receives or transmits ultrasonic signals; and a sensor controller configured to switch the sensor between a non-ultrasonic force detection mode and an ultrasonic image generation mode for one or more of the PMUT sensor elements, where the applied force is measured in the sensor detection mode. non-ultrasonic force and in which an object is imaged in an ultrasonic way during the ultrasonic imaging mode.
[2]
2. Apparatus according to claim 1, wherein the apparatus is configured to detect a finger touch based on a threshold activation force being measured by the apparatus in non-ultrasonic force detection mode.
[3]
Apparatus according to claim 2, wherein the sensor controller is configured to provide an application processor with an activation signal to activate one or more activation operations after the finger touch is detected.
[4]
4. Apparatus according to claim 2, wherein the apparatus is configured to detect a finger lift after detecting the finger touch based on a deactivation threshold force being measured by the apparatus in non-ultrasonic force detection mode .
[5]
5. Apparatus according to claim 4, wherein the deactivation threshold force is less than the activation threshold force.
[6]
6. Apparatus according to claim 3, wherein the sensor controller is configured to initialize the ultrasonic imaging mode after the finger touch is detected.
[7]
7. Apparatus according to claim 1, in which the sensor controller is configured to initiate the ultrasonic imaging mode based on a minimum imaging force being measured by the apparatus in non-force detection mode -ultrasonic.
[8]
Apparatus according to claim 1, wherein one or more of the PMUT sensor elements includes a 2D electron gas structure disposed in the diaphragm.
[9]
9. Apparatus according to claim 1, wherein the sensor controller is configured to switch between non-ultrasonic force detection mode and an ultrasonic image generation mode for each of the PMUT sensor elements in the sensor array. PMUT sensor elements.
[10]
10. Apparatus according to claim 1, wherein the sensor controller is configured to switch between non-ultrasonic force detection mode and an ultrasonic image generation mode for a subset of the PMUT sensor elements in the array of PMUT sensor elements.
[11]
Apparatus according to claim 10, wherein the subset of the PMUT sensor elements is located on the periphery of the PMUT sensor element arrangement.
[12]
Apparatus according to claim 10, wherein the PMUT sensor elements of the PMUT sensor element subset differ from the rest of the PMUT sensor elements of the PMUT sensor element array in one or more of their shape or size .
[13]
13. Apparatus, comprising: a substrate; a diaphragm including a mechanical layer arranged over a cavity, the cavity being positioned between the diaphragm and the substrate; and a 2D electron gas structure disposed over the diaphragm.
[14]
Apparatus according to claim 13, wherein the 2D electron gas structure is a gallium-aluminum nitride / gallium nitride (AlGaN / GaN) transistor.
[15]
Apparatus according to claim 13, wherein the diaphragm and the 2D electron gas structure are part of a sensor element, the diaphragm is capable of a static displacement when an applied force is applied, and the structure 2D electron gas is a deformation-sensitive structure configured to provide a static displacement signal that corresponds to the applied force.
[16]
An apparatus according to claim 15, wherein the diaphragm is additionally capable of dynamic displacement when the sensor element receives or transmits ultrasonic signals.
[17]
Apparatus according to claim 16, further comprising a sensor controller configured to switch the sensor element between a non-ultrasonic force detection mode and an ultrasonic imaging mode, in which the applied force is measured in the non-ultrasonic force detection mode and in which an object is imaged in an ultrasonic way during the ultrasonic imaging mode.
[18]
Apparatus according to claim 15, wherein the sensor element is one of an array of sensor elements on the substrate, each sensor element including a diaphragm and a mechanical layer arranged over a cavity, the cavity being positioned between the diaphragm and substrate, and each sensor element including a 2D electron gas structure disposed in the diaphragm.
[19]
An apparatus according to claim 15, further comprising an array of sensor elements of the piezoelectric micromechanical ultrasonic transducer (PMUT) type on the substrate.
[20]
Apparatus according to claim 13, further comprising a piezoelectric layer cell arranged on the diaphragm, wherein the piezoelectric layer cell is configured to excite the diaphragm and generate ultrasonic waves.
[21]
21. Apparatus according to claim 13, wherein the 2D electron gas structure is configured to detect static displacements or dynamic displacements of the diaphragm.
[22]
22. Computer readable non-temporary medium storing instructions executable by one or more processors coupled to a fingerprint sensor, the fingerprint sensor including an array of piezoelectric ultrasonic transducer (PMUT) sensor elements, instructions comprising: instructions for operating the PMUT sensor elements in a force detection mode; instructions for measuring a force applied to the fingerprint sensor operating in force detection mode; instructions to determine that a user's finger touched the fingerprint sensor based on the measured applied force; instructions for operating the PMUT sensor elements in an ultrasonic imaging mode to obtain fingerprint image information from the finger; and instructions for authenticating the user based on the fingerprint image information.
[23]
23. Computer-readable non-temporary medium according to claim 22, in which the instructions for determining that a finger touched the fingerprint sensor based on the applied force include instructions for comparing the applied force with an activation threshold force .
[24]
24. Computer-readable non-temporary medium according to claim 23, further comprising instructions for determining, after detecting that the finger has touched the fingerprint sensor, that the finger has been lifted from the fingerprint sensor based on a force deactivation threshold being measured by the device in force detection mode.
[25]
25. Computer-readable non-temporary medium according to claim 24, wherein the deactivation threshold force is less than the activation threshold force.
[26]
26. The apparatus of claim 23, further comprising instructions for determining that the applied force is greater than or equal to a minimum imaging threshold force.
[27]
27. Apparatus according to claim 26, further comprising instructions to initialize the ultrasonic imaging mode after determining that the applied force is greater than or equal to a minimum imaging threshold force.
[28]
28. Method of operation of a fingerprint sensor, the method comprising: measuring a finger force of a finger positioned on the fingerprint sensor; generate the finger image when the finger force exceeds a threshold level of pressed finger; and authenticate the finger based on the finger image generation.
[29]
29. The method of claim 28, wherein generating the finger image includes obtaining ultrasonic image information of the finger, and wherein the finger authentication is based on the ultrasonic image information.
[30]
30. The method of claim 28, wherein generating the finger image includes obtaining ultrasound image information of the finger when the finger strength exceeds a minimum threshold level of finger representable in image.
1/26
100
115 114 112
110
130 170
160
120 Figure 1A
100
110 114 120
112
Vinner Vref
180
Figure 1B
2/26
100 Vinner 115 Vref 114 112
110
130 170
160
120 Figure 1C 100 Vinner 115 Vref 114 112
110
130 170
160
120 Figure 1D
Vinner
++++
- - - -
Vref
Figure 1E
3/26
200 202
264
290 262 265
260
Figure 2
4/26
300
System Control Sensor System System Interface 302 304 306
Figure 3A
310 300
Image Processing Module 318 Ultrasonic Energy Sensor Power Array 324 312
Controller 314
Interface Memory 322 316
Processor 320
Figure 3B
5/26
400
Measure Fstatic static strength in the next 402 non-Fstatic sampling event ≥ Fon, min 404 yes
Performs activation operations due to 406 finger touch detection
Generates an ultrasonic fingerprint image 420
Perform 422 authentication process
Figure 4A
6/26
Measures Fstatic static strength at the 401 next 402 non-Fstatic sampling event ≥ Fon, min 404 yes Modifies operations due Performs operations from 412 to detection of activation due to detection 406 finger lifting finger touch
Measure Fstatic static strength in the next 408 sampling event yes Fstatic <Foff, max 410 no Measure Fstatic static strength in the next 414 non-Fstatic sampling event ≥ Fimage, min 416 yes no Fstatic ≤ Fimage, max 418 yes
Generates an ultrasonic fingerprint image 420
Performs 422 authentication process
Figure 4B
7/26
500
Pressing Lifting Finger Force Applied 512 Finger 506 520 522
Fon, min tsample 504 508 Foff, max 502 510 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 Time
Figure 5A
8/26
501
Fimage, max Force Pressing Applied Finger Lift 528 Finger 524 526 Finger 514 Fimage, min 520 522 512 tsample 504 506 Fon, min Foff, max 502 508 510 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 Time
Figure 5B
9/26
600
Finger Finger Fimage, max Finger Finger Operation Mode
Image Generation Mode Fimage, min Ultrasonic 602 Fon, min
604 Non-Ultrasonic Force Detection Mode (Force Detection and Activation)
Foff, max
0 20 40 60 80 100 120 140
Applied Finger Force (gf)
Figure 6
10/26
Vs 700 740 Vinner Vg
Vref 715 714 Vd 712 710
730 770
760
720 Figure 7A 700
710 720
714 740
712 Vinner Vref
Figure 7B
Vinner S G D
++++
- - - -
Vref
Figure 7C
11/26
740
788 790 792
786 - - - - - - - - - - 784
782
Figure 7D
12/26
800
802 804 860
804
Figure 8
13/26
900
904 902 960
Figure 9
14/26
1000
1002 1060 1004
Figure 10
15/26
1100
1108 1102 1160 1104
1110 1110
1108
Figure 11
16/26
1200
1204 1260
Figure 12
17/26
1300
1302 1306 1360
Figure 13
18/26
Vinner 1400 Vouter 1415 Vref 1414 1413 1412
1410
1430 1470
1460
1420
Figure 14A
Vinner 1400 Vouter 1415 Vref 1414 1413 1412
1410
1430 1470
1460
1420 Figure 14B
19/26
1400
Vouter 1413 1410 1414 1420
1412
Vinner Vref
Figure 14C
Vinner
I will have
- - ++++ - -
Vref
Figure 14D
20/26
1500 Vinner 1515 Vref 1514 1512
1510
1530 1570
1560
1520
Figure 15A
1500 Vinner 1515 Vref 1514 1512
1510
1530 1570
1560
1520 Figure 15B
21/26
1500 1560
Vinner
Vref
1510 1520 1512 1514
Figure 15C
Vinner
++++
- - - -
Vref
Figure 15D
22/26
Vinner 1600 Vouter 1615 Vref 1614 1613 1612
1610
1630 1670
1660
1620
Figure 16A
Vinner 1600 Vouter 1615 Vref 1614 1613 1612
1610
1630 1670
1660
1620 Figure 16B
23/26
1600 1660
I will have
Vinner
Vref
I will have
1610 1620 1612 1613 1614
Figure 16C
Vinner
I will have
- - ++++ - -
Vref
Figure 16D
24/26
1700 1740 Vs Vouter Vg Vd Vref 1715 1713 1712 1710
1730 1770
1760
1720
Figure 17A
1700 1740 Vs Vinner Vg Vd Vref 1715 1713 1712 1710
1730 1770
1760
1720
Figure 17B
25/26
1700
1710 1720 1730 1713 1740
1712 Vouter Vref
Figure 17C
Vouter S G D
++++ ++++
- - - - - -
Vref
Figure 17D
26/26
1886 1884 1882 1830 1870 1860 1820
Figure 18A 1856 1854 1888 1890 1852 1850 1886 1830 1870 1860 1820
Figure 18B 1866 1864 1892 1886 1884 1830 1870 1860 1820
Figure 18C 1800 1840 1888 1892 1890 1868 1830 1870 1860 1820
Figure 18D

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---

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---

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引用文献:

---

公开号 | 申请日 | 公开日 | 申请人 | 专利标题

---

---

US9001045B2|2005-11-08|2015-04-07|Nokia Corporation|Cost efficient element for combined piezo sensor and actuator in robust and small touch screen realization and method for operation thereof|

---

US20080166028A1|2007-01-10|2008-07-10|Turek Joseph J|Pressure actuated biometric sensor|

---

JP5293557B2|2008-12-17|2013-09-18|セイコーエプソン株式会社|Ultrasonic transducer, ultrasonic transducer array and ultrasonic device|

---

US8970507B2|2009-10-02|2015-03-03|Blackberry Limited|Method of waking up and a portable electronic device configured to perform the same|

---

US9096422B2|2013-02-15|2015-08-04|Fujifilm Dimatix, Inc.|Piezoelectric array employing integrated MEMS switches|

---

US20140355387A1|2013-06-03|2014-12-04|Qualcomm Incorporated|Ultrasonic receiver with coated piezoelectric layer|

---

US9262003B2|2013-11-04|2016-02-16|Qualcomm Incorporated|Piezoelectric force sensing array|

---

KR101883209B1|2013-12-12|2018-08-30|퀄컴 인코포레이티드|Micromechanical ultrasonic transducers and display|

---

KR101869091B1|2014-03-05|2018-06-20|메저먼트 스페셜티스, 인크.|Ultrasonic and strain dual mode sensor for contact switch|

---

US10139479B2|2014-10-15|2018-11-27|Qualcomm Incorporated|Superpixel array of piezoelectric ultrasonic transducers for 2-D beamforming|

---

US10497748B2|2015-10-14|2019-12-03|Qualcomm Incorporated|Integrated piezoelectric micromechanical ultrasonic transducer pixel and array|

---

TWI652625B|2018-03-16|2019-03-01|友達光電股份有限公司|Fingerprint sensing device|

---

EP3543897A1|2018-03-19|2019-09-25|Nxp B.V.|Fingerprint sensing device|US10656255B2|2016-05-04|2020-05-19|Invensense, Inc.|Piezoelectric micromachined ultrasonic transducer |

---

US10670716B2|2016-05-04|2020-06-02|Invensense, Inc.|Operating a two-dimensional array of ultrasonic transducers|

---

US10445547B2|2016-05-04|2019-10-15|Invensense, Inc.|Device mountable packaging of ultrasonic transducers|

---

US10539539B2|2016-05-10|2020-01-21|Invensense, Inc.|Operation of an ultrasonic sensor|

---

US10562070B2|2016-05-10|2020-02-18|Invensense, Inc.|Receive operation of an ultrasonic sensor|

---

US10632500B2|2016-05-10|2020-04-28|Invensense, Inc.|Ultrasonic transducer with a non-uniform membrane|

---

US10441975B2|2016-05-10|2019-10-15|Invensense, Inc.|Supplemental sensor modes and systems for ultrasonic transducers|

---

US10452887B2|2016-05-10|2019-10-22|Invensense, Inc.|Operating a fingerprint sensor comprised of ultrasonic transducers|

---

US10600403B2|2016-05-10|2020-03-24|Invensense, Inc.|Transmit operation of an ultrasonic sensor|

---

US10408797B2|2016-05-10|2019-09-10|Invensense, Inc.|Sensing device with a temperature sensor|

---

US10706835B2|2016-05-10|2020-07-07|Invensense, Inc.|Transmit beamforming of a two-dimensional array of ultrasonic transducers|

---

CN108363938A|2017-01-25|2018-08-03|众智光电科技股份有限公司|Ultrasonic wave biological identification sensor|

---

US10891461B2|2017-05-22|2021-01-12|Invensense, Inc.|Live fingerprint detection utilizing an integrated ultrasound and infrared sensor|

---

US10474862B2|2017-06-01|2019-11-12|Invensense, Inc.|Image generation in an electronic device using ultrasonic transducers|

---

US10555085B2|2017-06-16|2020-02-04|Apple Inc.|High aspect ratio moving coil transducer|

---

US10643052B2|2017-06-28|2020-05-05|Invensense, Inc.|Image generation in an electronic device using ultrasonic transducers|

---

US10503313B2|2017-08-21|2019-12-10|Apple Inc.|Unified input/output interface for electronic device|

---

CN109472182B|2017-09-08|2020-09-22|茂丞科技有限公司|Wafer-level ultrasonic chip scale manufacturing and packaging method|

---

US10684734B2|2017-09-28|2020-06-16|Apple Inc.|Transparent high-resistivity layer for electrostatic friction modulation over a capacitive input sensor|

---

US10949642B2|2017-11-24|2021-03-16|Integrated Biometrics, Llc|Method for capture of a fingerprint using an electro-optical material|

---

US10997388B2|2017-12-01|2021-05-04|Invensense, Inc.|Darkfield contamination detection|

---

US10936841B2|2017-12-01|2021-03-02|Invensense, Inc.|Darkfield tracking|

---

US10984209B2|2017-12-01|2021-04-20|Invensense, Inc.|Darkfield modeling|

---

US11151355B2|2018-01-24|2021-10-19|Invensense, Inc.|Generation of an estimated fingerprint|

---

US10755067B2|2018-03-22|2020-08-25|Invensense, Inc.|Operating a fingerprint sensor comprised of ultrasonic transducers|

---

EP3886413A1|2018-11-23|2021-09-29|LG Electronics Inc.|Mobile terminal|

---

US10936843B2|2018-12-28|2021-03-02|Invensense, Inc.|Segmented image acquisition|

---

CN111405455A|2019-01-02|2020-07-10|京东方科技集团股份有限公司|Sound production device, manufacturing method thereof and display device|

---

US11068688B2|2019-01-04|2021-07-20|Pierre T. Gandolfo|Multi-function ultrasonic sensor controller with fingerprint sensing, haptic feedback, movement recognition, 3D positioning and remote power transfer capabilities|

---

CN109596053B|2019-01-14|2019-10-01|中山大学|A method of measurement high-speed rail bridge vertically moves degree of disturbing|

---

WO2020263875A1|2019-06-24|2020-12-30|Invensense, Inc.|Fake finger detection using ridge features|

---

CN110287871B|2019-06-25|2021-04-27|京东方科技集团股份有限公司|Fingerprint identification device, driving method thereof and display device|

---

WO2020264046A1|2019-06-25|2020-12-30|Invensense, Inc.|Fake finger detection based on transient features|

---

US11216632B2|2019-07-17|2022-01-04|Invensense, Inc.|Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness|

---

US11176345B2|2019-07-17|2021-11-16|Invensense, Inc.|Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness|

---

US11232549B2|2019-08-23|2022-01-25|Invensense, Inc.|Adapting a quality threshold for a fingerprint image|

---

US11243300B2|2020-03-10|2022-02-08|Invensense, Inc.|Operating a fingerprint sensor comprised of ultrasonic transducers and a presence sensor|

法律状态:
2021-04-20| B08F| Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]|Free format text: REFERENTE A 3A ANUIDADE. |

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2021-07-13| B08G| Application fees: restoration [chapter 8.7 patent gazette]|

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2021-11-03| B350| Update of information on the portal [chapter 15.35 patent gazette]|

优先权:

---

申请号 | 申请日 | 专利标题

---

US15/633,386|US10569302B2|2017-06-26|2017-06-26|Biometric sensor with force detection and ultrasonic imaging capability|

---

US15/633,386|2017-06-26|

---

PCT/US2018/034214|WO2019005344A1|2017-06-26|2018-05-23|Biometric sensor with force detection and ultrasonic imaging capability|

---